دیتاشیت P5506HVG-VB
مشخصات دیتاشیت
| نام دیتاشیت |
P5506HVG-VB
|
| حجم فایل |
69.195
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Type:
2 N-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec P5506HVG-VB
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
4W
-
Total Gate Charge (Qg@Vgs):
11.7nC@10V
-
Drain Source Voltage (Vdss):
60V
-
Input Capacitance (Ciss@Vds):
600pF@25V
-
Continuous Drain Current (Id):
7A
-
Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
50pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
28mΩ@10V,4.5A
-
Package:
SOP-8
-
Manufacturer:
VBsemi Elec
